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	High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates
	Zhang, Jinwen ; Hon, Wai Cheong ; Leung, Lydia L. W. ; Chen, K.J.
	2004
英文摘要	This paper reports high performance edge-suspended passive components realized by CMOS-compatible micromachining. The operation principle is described in detail. Edge-suspended inductors (ESIs) and CPWs (ESCPWs) are fabricated using a combination of deep dry etching and anisotropic wet etching techniques. For a three-turn 4.5-nH inductor, a 70% increase (from 6.8 to 11.7) in maximum Q-factor and a 57% increase (from 9.1 GHz to 14.3 GHz) in self-resonance frequency are obtained with a 11 ??m suspended edge in 25 ??m wide lines. A 50 ?? CPW exhibits a reduction in insertion loss, from 2.4dB/mm to 0.4dB/mm at 39 GHz. ? 2004 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295341]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Jinwen,Hon, Wai Cheong,Leung, Lydia L. W.,et al. High-performance edge-suspended spiral inductors and CPWS on CMOS-grade silicon substrates. 2004-01-01.

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