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	Properties of nanosized tin oxide thin film prepared by reactive magnetron sputtering
	Xiao, Di Liu ; Dacheng, Zhang
	2007
英文摘要	Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400??C to 900??C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650??C possesses better properties and suitable to be used in our gas sensor. Copyright ? 2007 by ASME.; EI; 0
语种	英语
DOI标识	10.1115/MNC2007-21333
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295122]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xiao, Di Liu,Dacheng, Zhang. Properties of nanosized tin oxide thin film prepared by reactive magnetron sputtering. 2007-01-01.

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