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	Comparative study of triangular-shaped silicon nanowire transistors
	Zhang, Yi-Bo ; Sun, Lei ; Xu, Hao ; Han, Jing-Wen ; Wang, Yi ; Zhang, Sheng-Dong
	2014
英文摘要	Nanowire transistors with triangular cross sections (TNWTs) are proposed and studied. TNWT's working mechanism and the influence of physical parameters on device performance are investigated with TCAD tools. It is found that TNWT's conducting area expands from the channel center to the triangle's vertices with higher gate bias. TNWT has larger cross section than its counterpart with inscribed circle nanowire, thus exhibiting higher drain current and cut-off frequency. TNWT with longer channel length shows less influence from DIBL, and requires lower gate work function to achieve proper bias. Moreover, we also find that TNWT with moderate angle is less affected by SCE, and shows lower subthreshold slope. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021630
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294860]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Yi-Bo,Sun, Lei,Xu, Hao,et al. Comparative study of triangular-shaped silicon nanowire transistors. 2014-01-01.

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