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	A comprehensive NBTI degradation model based on ring oscillator circuit
	Qiao, Fang ; He, Yandong ; Ai, Leilei ; Zhang, Ganggang ; Zhang, Xing
	2014
英文摘要	Negative bias temperature instability (NBTI) as one of CMOS device degradations has been extensively researched. Based on the theories of NBTI degradations, we optimize a reliability model for the frequency degradation of the ring oscillator (RO), and propose a new ring oscillator structure corresponding to the model. In this paper, the new ring oscillator is working under two different static stress modes. We found that the frequency degradation of the same RO is much different in different static stress modes, and the degree of the frequency degradation of different-stage ROs shows the same trend in different stress modes. The model is demonstrated by using the SMIC 65nm, 1.2V technology. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021670
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294831]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qiao, Fang,He, Yandong,Ai, Leilei,et al. A comprehensive NBTI degradation model based on ring oscillator circuit. 2014-01-01.

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