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A TDC based process variation sensor for both NMOS and PMOS variation monitoration
Ai, Lei ; He, Yandong ; Zhang, Ganggang ; Zhang, Xing
2014
英文摘要A TDC based process variation sensing circuit for monitoring the variation of both NMOS and PMOS is proposed. The digital outputs of this sensor can offer the circuit designer clear message that indicates the variation of both NMOS and PMOS. Based on the specific inverter chain design concept, this sensor demonstrated with better sensitivity. 10000 Monte Carlo Simulation based on 65nm bulk CMOS process technology is used to verify the feasibility of this sensor. ? 2014 IEEE.; EI; 0
语种英语
DOI标识10.1109/EDSSC.2014.7061185
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/294793]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Ai, Lei,He, Yandong,Zhang, Ganggang,et al. A TDC based process variation sensor for both NMOS and PMOS variation monitoration. 2014-01-01.
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