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	Electronic structures of strained MoS2 nanoribbons
	Ruan, Si ; Xin, Zheng ; Zeng, Lang ; Kang, Jinfeng ; Du, Gang ; Liu, Xiaoyan
	2014
英文摘要	The density functional theory (DFT) is carried out to predict the strain effect on the electronic structure of MoS2 nanoribbons with armchair-terminated edges (AMoS2NRs). It is found that horizontal compressive strain along the one-dimensional nanoscale periodic direction modifies the indirect band gap into the direct one. But it needs larger compressive strain to make 4-AMoS2NR direct band gap semiconductor. By contrast, tensile strain cannot render bandgap direct. 5% compressive strain and tensile strain both reduce the band gap of AMoS2NRs except 4- AMoS2NR. The compressive strain reduces the carrier effective mass of AMoS2NRs. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021525
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294752]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ruan, Si,Xin, Zheng,Zeng, Lang,et al. Electronic structures of strained MoS2 nanoribbons. 2014-01-01.

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