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	RDF effect induced by source/drain doping in nano-scale UTB SOI MOSFET with nominally un-doped channel
	Du, Linfeng ; Zhang, Shengdong
	2010
英文摘要	SOI MOSFETs with un-doped channel are generally considered immune to random dopant fluctuation (RDF) effect. However in ultra-small MOSFETs, the lateral extension distribution of source/drain (S/D) impurity can make the 'nominally' un-doped channel considerably doped, thus very likely resulting in an unexpected noticeable RDF effect. In this work, we investigate the unexpected RDF effect in UTB SOI MOSFETs with un-doped channel by device simulation. Results show that, for sub-20nm gate length devices, the S/D doping abruptness (??) is required to be around 1 nm/dec to have an acceptable Vth variation caused by the unexpected RDF effect. This requirement seems too difficult to meet in the present or near future technologies. A new limit to scaling nano-scale SOI devices is thus revealed. ? 2010 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/EDSSC.2010.5713715
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294498]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, Linfeng,Zhang, Shengdong. RDF effect induced by source/drain doping in nano-scale UTB SOI MOSFET with nominally un-doped channel. 2010-01-01.

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