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	Simulation on endurance characteristic of charge trapping memory
	Lun, Zhiyuan ; Wang, Taihuan ; Zeng, Lang ; Zhao, Kai ; Liu, Xiaoyan ; Wang, Yi ; Kang, Jinfeng ; Du, Gang
	2013
英文摘要	A comprehensive simulation method for endurance reliability issues in charge trapping memory is developed. For this purpose, a practical algorithm is carefully designed to investigate the cycling performance of charge trapping memory. The models that account for the generation of substrate/tunneling oxide interface trapped charge and oxide trapped charge are incorporated into the simulation. The influence of these models on flat-band voltage evolution under programing/erasing cycling is investigated in detail, thus providing insight into the mechanism of the endurance issues in charge trapping memory. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/SISPAD.2013.6650632
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294376]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lun, Zhiyuan,Wang, Taihuan,Zeng, Lang,et al. Simulation on endurance characteristic of charge trapping memory. 2013-01-01.

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