Conductivity to soft failure of N-O-Si thin film used in nanometer device

CORC > 北京大学 > 信息科学技术学院

	Conductivity to soft failure of N-O-Si thin film used in nanometer device
	Xu, Mingzhen ; Tan, Changhua ; He, Yandong ; Duan, Xiaorong
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2005
英文摘要	The properties of conductivity at soft failure are studied under constant voltage stress. It is experimentally shown that the logarithm of the conductivity as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity-to-breakdown and time-to-breakdown are also strongly correlated, and obey a simple anti-symmetrical law. They can be explained by stress induced defect conduction mechanism.; EI; 0; SUPPL.; 126-128; 26
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294369]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Mingzhen,Tan, Changhua,He, Yandong,et al. Conductivity to soft failure of N-O-Si thin film used in nanometer device[J]. pan tao ti hsueh paochinese journal of semiconductors,2005.
APA	Xu, Mingzhen,Tan, Changhua,He, Yandong,&Duan, Xiaorong.(2005).Conductivity to soft failure of N-O-Si thin film used in nanometer device.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Xu, Mingzhen,et al."Conductivity to soft failure of N-O-Si thin film used in nanometer device".pan tao ti hsueh paochinese journal of semiconductors (2005).