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	Vertical profiles and CD loss control in deep RIE technology
	Liu, XS ; Wang, CW ; Zhu, Y ; Yan, GZ
	2004
关键词	anisotropy parameter deep RIE ICP MEMS CD loss DRIE
英文摘要	The Deep Reactive Ion Etching (DRIE) technology is widely used to fabricate high aspect ratio structures in MEMS devices. The vertical profiles of the trenches etched by normal advanced silicon etching are always not satisfied enough for some applications such as vibratory lateral gyroscope. Bad vertical profiles will decrease the capacitance signal of lateral comb, change the designed stress of cantilever beam, reduce the weight of the mass and finally affect the sensibility and stability of MEMS devices, especially the small dimension MEMS structure. We introduce a new technology to improve the vertical profiles, which is realized by decreasing the etching time each cycle. The anisotropy parameter improves from 25 to 175. Moreover, we refer a method to reduce CD loss. It is realized by adding descending passivation gasses C4F8 in the first several minutes and decreasing the etching time in the switch periods. The CD loss is decreased from 145nm to 55nm.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000227342202062&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293776]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, XS,Wang, CW,Zhu, Y,et al. Vertical profiles and CD loss control in deep RIE technology. 2004-01-01.

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