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	Heterostructure HEMT Electronic Device Simulation with Density Functional Theory
	Hu, Yiqing ; Wang, Jinyan ; Wen, C. P. ; Yu, Min ; Mao, LingFeng ; Hao, Yilong
	2010
关键词	TRANSISTOR MOSFETS MODEL SOI
英文摘要	A new simulation algorithm based on the density functional theory is proposed in the application of the simulation of heterostructure HEMT devices. In this new algorithm, the Gauss bias is adopted and a new energy functional is developed to solve the Schrodinger and Poisson equations in the HEMT device. By using Gauss biases, this algorithm could avoid large data storage and reduce the computational time of HEMT device simulation. One exaple compared with nonuniform mesh shows the advantage of this new algorithm, where only several Gauss biases are required to obtain high resolution numerical results of wave functions. Deduced from the density functional theory, this new simulation algorithim is suitable for a full 3D simulation of semiconductor devices. Finally, the result of a three-dimensional numerical simulation of the AlGaN/GaN heterostructure is obtained.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000313327800013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1149/1.3360599
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293022]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hu, Yiqing,Wang, Jinyan,Wen, C. P.,et al. Heterostructure HEMT Electronic Device Simulation with Density Functional Theory. 2010-01-01.

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