QQ客服 官方微博 反馈留言

	High Performance Zn1-xMgxO TFTs for Ultraviolet Image Sensors
	Lin, X. ; Jiang, B. B. ; He, X. ; Li, S. J. ; Li, Y. L. ; Zhang, S. D.
	2011
英文摘要	This paper reports the studies on Zn1-xMgxO TFTs for UV image sensors. The channel layer of TFTs was deposited by reactive DC magnetron sputtering with Zn&Mg insetting metal target for the first time. These Zn1-xMgxO TFTs on glass substrate show excellent UV absorption window with absorption edge of 340 nm and optical transmittance of >90% in the visible range. They display a field effect mobility of 0.02 cm (2)V(-1)s(-1), a threshold voltage of 10 V, an on/off ratio of 6x10(5), and a subthreshold swing of 0.5 V/decade.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000304037500164&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/EDSSC.2011.6117745
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292915]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lin, X.,Jiang, B. B.,He, X.,et al. High Performance Zn1-xMgxO TFTs for Ultraviolet Image Sensors. 2011-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。