QQ客服 官方微博 反馈留言

	Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs
	Huang, Liang-Xi ; An, Xia ; Tan, Fei ; Wu, Wei-Kang ; Huang, Ru
	2012
英文摘要	The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18 mu m SOT pMOSFETs is investigated in this paper. Two classical bias modes (V-g@I-submax and V-g=V-d) were applied to analyze the CHC degradation behavior of SOT pMOSFETs. The results show that at low V-g, hot carriers injection produced by impact ionization is the main factor contributed to degradation. However, the degradation stressed at high V-g is controlled by both CHC and NBTI effect, showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor. A possible mechanism is put forward to explain the enhanced CHC degradation under V-g=V-d compared with pure NBTI degradation. The influence of floating body on the performance degradation of PDSOI devices is also investigated.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700283&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292717]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Liang-Xi,An, Xia,Tan, Fei,et al. Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs. 2012-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。