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	A MIM Device Featuring both RRAM and Diode Behavior
	Tan, Shenghu ; Zhang, Lijie ; Pan, Yue ; Huang, Yinglong ; Tang, Yu ; Yang, Gengyu ; Mao, Jun ; Cai, Yimao ; Huang, Ru
	2012
关键词	HIGH-DENSITY
英文摘要	In this paper, a TiN/TaOx/Pt MIM device featuring multi-function characteristics has been successfully fabricated. This device exhibits excellent bipolar resistive random access memory (RRAM) characteristics including low switching voltages, fast switching speed, good retention capability and stable cycling behavior. In addition, it also shows good diode behaviors with abrupt switching process and good thermal stability. The RRAM behaviors and diode rectifying characteristics can be transformed between each other by the voltage controlling, which indicates that this device can be easily programmed for reconfigurable circuits. Further analysis of the mechanism about the multi-function behaviors of the TiN/TaOx/Pt device is also given in this paper.; Electrochemistry; Engineering, Electrical & Electronic; Physics, Applied; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1149/1.3694299
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292680]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tan, Shenghu,Zhang, Lijie,Pan, Yue,et al. A MIM Device Featuring both RRAM and Diode Behavior. 2012-01-01.

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