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Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor
Zhao, D. Q. ; Zhang, X. ; Liu, P. ; Yang, F. ; Lin, C. ; Zhang, D. C.
2013
关键词Post-CMOS Monolithic Integration Stress Bimaterial Uncooled IR Sensor READOUT DEVICES
英文摘要In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR. sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR. sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage(Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319023100043&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Materials Science, Multidisciplinary; Remote Sensing; EI; CPCI-S(ISTP); 0
语种英语
DOI标识10.4028/www.scientific.net/KEM.543.176
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/292629]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Zhao, D. Q.,Zhang, X.,Liu, P.,et al. Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor. 2013-01-01.
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