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	Simulation of threshold voltage adjustment by B+ implantation for pMOS-RADFET application
	Wang, Shuaimin ; Liu, Peng ; Zhang, Jinwen
	2013
关键词	process simulation impurity concentration RADFET RADIATION SENSITIVITY SENSORS
英文摘要	pMOS-RADFET (radiation field-effect transistor) as micro-dosimeter has been widely applied in spacecraft, medicine and personnel dosimetry. Thick gate-oxide and zero threshold voltage (V-th) are two critical factors to achieve high performance pMOS-RADFET. In this paper, the Vth adjustment techniques for thick gate oxide by B+ implantation are simulated systematically by Silvaco TCAD, including implanting energy, dose and annealing conditions. And the impurity distributions both in gate-oxide and silicon substrate are analyzed. The results show that implanting energy up to 130keV and dose as 3.2e11 works well for 388nm gate-oxide. Considering activation and distribution of impurity, both annealing temperature and time has to be as low and short as possible.; Engineering, Biomedical; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/NEMS.2013.6559728
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292560]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Shuaimin,Liu, Peng,Zhang, Jinwen. Simulation of threshold voltage adjustment by B+ implantation for pMOS-RADFET application. 2013-01-01.

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