A novel 10-nm physical gate length double-gate junction field effect   transistor

doi:10.1088/1674-1056/17/2/054

CORC > 北京大学 > 信息科学技术学院

	A novel 10-nm physical gate length double-gate junction field effect transistor
	Hou Xiao-Yu ; Huang Ru ; Chen Gang ; Liu Sheng ; Zhang Xing ; Yu Bin ; Wang Yang-Yuan
刊名	chinese physics b
	2008
关键词	MOSFET double-gate MOSFET depletion operation mode FINFET
DOI	10.1088/1674-1056/17/2/054
英文摘要	A novel double-gate (DG) junction field effect transistor (JFET) with depletion operation mode is proposed in this paper. Compared with the conventional DG MOSFET, the novel DG JFET can achieve excellent performance with square body design, which relaxes the requirement on silicon film thickness of DG devices. Moreover, due to the structural symmetry, both p-type and n-type devices can be realized on exactly the same structure, which greatly simplifies integration. It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000253960700054&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Multidisciplinary; SCI(E); EI; 中国科学引文数据库(CSCD); 1; ARTICLE; 2; 685-689; 17
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292097]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hou Xiao-Yu,Huang Ru,Chen Gang,et al. A novel 10-nm physical gate length double-gate junction field effect transistor[J]. chinese physics b,2008.
APA	Hou Xiao-Yu.,Huang Ru.,Chen Gang.,Liu Sheng.,Zhang Xing.,...&Wang Yang-Yuan.(2008).A novel 10-nm physical gate length double-gate junction field effect transistor.chinese physics b.
MLA	Hou Xiao-Yu,et al."A novel 10-nm physical gate length double-gate junction field effect transistor".chinese physics b (2008).