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	The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
	Sun, Bing ; Liu, Lifeng ; Xu, Nuo ; Gao, Bin ; Wang, Yi ; Han, Dedong ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng
	2009
关键词	OXIDE DIODES
英文摘要	In this paper, TiN/ZrO2/Pt sandwiched resistive switching memory devices were fabricated. The effect of set current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device was studied. The different dependence of low resistance state on the set current compliance were observed under the different magnitudes of set current compliance: 1) the average read current was linearly dependent on the set current compliance in the magnitude of low set current compliance; 2) then a weaker dependence of the average read current on the set current compliance was observed in the magnitude of higher set current compliance; 3) when the current compliance is high enough, the unipolar resistive switching behaviors instead of the bipolar resistive switching was shown. A physical model based on oxygen vacancy conducting filamentary paths is proposed to explain the effect of set current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device. (C) 2009 The Japan Society of Applied Physics; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265652700062&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 20
语种	英语
DOI标识	10.1143/JJAP.48.04C061
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292019]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Sun, Bing,Liu, Lifeng,Xu, Nuo,et al. The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device. 2009-01-01.

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