Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive   Random Access Memory with Ultralow Switching Current/Power

doi:10.1143/JJAP.51.04DD08

CORC > 北京大学 > 信息科学技术学院

	Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
	Zhang, Feifei ; Li, Xiang ; Gao, Bin ; Chen, Bing ; Huang, Peng ; Fu, Yihan ; Chen, Yuansha ; Liu, Lifeng ; Kang, Jinfeng ; Singh, Navab ; Lo Guo-Qiang ; Kwong, Dim-Lee
刊名	日本应用物理学杂志
	2012
关键词	LOW-POWER RRAM LAYER
DOI	10.1143/JJAP.51.04DD08
英文摘要	Although Resistive random access memory (RRAM) is a promising alternative for next-generation nonvolatile memory, it still suffers from high switching current/power, resulting in large selectors that are normally in series with resistive devices. In this paper, a novel Dynamic random access memory (DRAM) like one-transistor-one-resistor (1T1R) structure is proposed, in which the source/drain of the transistor also serves as the bottom electrode of the RRAM device. Complementary metal oxide semiconductor (CMOS) compatible Hf-based Si/HfO2/TiN RRAM devices were fabricated and ultralow switching current/power was obtained. The set/reset current can be as low as 50 nA/1.25nA. The programming power for set and reset is only 18 mu W and 1.625 nW, respectively. The mechanism of both Schottky emission and electronic hopping via oxygen vacancy defects is proposed to explain the measured resistive switching characteristics. (C) 2012 The Japan Society of Applied Physics; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000303928600031&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 3; ARTICLE; 4,SI; 51
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291846]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Feifei,Li, Xiang,Gao, Bin,et al. Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power[J]. 日本应用物理学杂志,2012.
APA	Zhang, Feifei.,Li, Xiang.,Gao, Bin.,Chen, Bing.,Huang, Peng.,...&Kwong, Dim-Lee.(2012).Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power.日本应用物理学杂志.
MLA	Zhang, Feifei,et al."Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power".日本应用物理学杂志 (2012).