Effect of O-2 Incorporation During the Channel Fabrication Process on   Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

doi:10.7567/JJAP.52.04CF11

CORC > 北京大学 > 信息科学技术学院

	Effect of O-2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics
	Cai, Jian ; Han, Dedong ; Geng, Youfeng ; Wang, Wei ; Wang, Liangliang ; Tian, Yu ; Qian, Lixun ; Zhang, Xing ; Zhang, Shengdong ; Wang, Yi
刊名	日本应用物理学杂志
	2013
关键词	SEMICONDUCTORS DEPOSITION
DOI	10.7567/JJAP.52.04CF11
英文摘要	High-performance aluminum-doped zinc oxide thin-film transistors (AZO TFTs) have been successfully fabricated on glass substrates. By controlling the oxygen flow ratio (OFR) during the deposition of an AZO active layer, we have demonstrated that the incorporation of oxygen in the deposition atmosphere plays an important role in improving the electronic performance of TFTs. For gate voltage V-G = -2 to 5 V, the TFTs with an AZO active layer sputter deposited in an atmosphere of Ar and O-2 mixture at room temperature (RT) as the channel layer exhibit much better properties than TFTs whose AZO layer was deposited in pure Ar atmosphere, such as a high saturation mobility (mu(sat)) of 113 cm(2) V-1 s(-1), a positive threshold voltage V-th of 1.5 V, an improved steep subthreshold swing from 400 to 125 mV/decade, a decreased off-state current (I-off) from 10(-8) to 5 x 10(-13) A, an increased on/off ratio from 10(5) to 10(9), and a higher transmittance of 82.5%. (C) 2013 The Japan Society of Applied Physics; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000320002400088&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 2; ARTICLE; 4,SI; 52
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291755]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cai, Jian,Han, Dedong,Geng, Youfeng,et al. Effect of O-2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics[J]. 日本应用物理学杂志,2013.
APA	Cai, Jian.,Han, Dedong.,Geng, Youfeng.,Wang, Wei.,Wang, Liangliang.,...&Wang, Yi.(2013).Effect of O-2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics.日本应用物理学杂志.
MLA	Cai, Jian,et al."Effect of O-2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics".日本应用物理学杂志 (2013).