The effects of strain and surface roughness scattering on the   quasi-ballistic characteristics of a Ge nanowire p-channel field-effect   transistor

doi:10.1088/1674-1056/22/10/107104

CORC > 北京大学 > 信息科学技术学院

	The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
	Qin Jie-Yu ; Du Gang ; Liu Xiao-Yan
刊名	chinese physics b
	2013
关键词	nanowire strain surface roughness scattering quasi-ballistic CARRIER TRANSPORT QUANTUM DOTS SILICON DISTRIBUTIONS DEPENDENCE THICKNESS GERMANIUM MOBILITY STRESS MODEL
DOI	10.1088/1674-1056/22/10/107104
英文摘要	The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor (pFET) are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current (I-ON), but has little effect on the hole mobility. The I-ON is degraded by the surface roughness scattering in both strained and unstrained devices.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000326616700071&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Multidisciplinary; SCI(E); EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 3; ARTICLE; 10; 22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291706]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qin Jie-Yu,Du Gang,Liu Xiao-Yan. The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor[J]. chinese physics b,2013.
APA	Qin Jie-Yu,Du Gang,&Liu Xiao-Yan.(2013).The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor.chinese physics b.
MLA	Qin Jie-Yu,et al."The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor".chinese physics b (2013).