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	Parasitic bipolar transistor effect in poly-Si thin film transistor
	Liu, XY ; Guan, XD ; Han, RQ
	1998
关键词	CURRENT MECHANISMS INSULATOR MOSFETS LEAKAGE CURRENT
英文摘要	A simple physical model is developed to describe the parasitic bipolar transistor effect when poly silicon thin film transistor works in the off state. By using the model, the relaltions of leakage current between terminal voltage, temperature of the TET can be obtained.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291518]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, XY,Guan, XD,Han, RQ. Parasitic bipolar transistor effect in poly-Si thin film transistor. 1998-01-01.

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