Investigation of oxidation process in self-terminating gate recess wet   etching technique for AlGaN/GaN normally-off MOSFETs

doi:10.1049/el.2014.2790

CORC > 北京大学 > 信息科学技术学院

	Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs
	Liu, Jingqian ; Wang, Jinyan ; Xu, Zhe ; Jiang, Haisang ; Yang, Zhenchuan ; Wang, Maojun ; Yu, Min ; Xie, Bing ; Wu, Wengang ; Ma, Xiaohua ; Zhang, Jincheng ; Hao, Yue
刊名	electronics letters
	2014
关键词	SURFACE HEMTS ENHANCEMENT GAN
DOI	10.1049/el.2014.2790
英文摘要	A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal-oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650 degrees C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70 degrees C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved.; Engineering, Electrical & Electronic; SCI(E); EI; 0; ARTICLE; wangjinyan@pku.edu.cn; 25; 1980-1981; 50
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291492]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Jingqian,Wang, Jinyan,Xu, Zhe,et al. Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs[J]. electronics letters,2014.
APA	Liu, Jingqian.,Wang, Jinyan.,Xu, Zhe.,Jiang, Haisang.,Yang, Zhenchuan.,...&Hao, Yue.(2014).Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs.electronics letters.
MLA	Liu, Jingqian,et al."Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs".electronics letters (2014).