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	Microfabrication of Through Silicon Vias (TSV) for 3D SiP
	Liao, Hongguang ; Miao, Min ; Wan, Xin ; Jin, Yufeng ; Zhao, Liwei ; Li, Bohan ; Zhu, Yuhui ; Sun, Xin
	2008
关键词	3D SiP Through Silicon Via (TSV) copper electroplating Periodic Pulse Reverse (PPR) TECHNOLOGY WAFER LASER
英文摘要	A microfabrication flow for Through Silicon Via (TSV), as one of the critical and enabling technologies for three Dimensional System in Packaging (3D SiP), is presented in this paper. We focus on several critical processing steps for TSV fabrication, including: via micromachining; deposition of via insulation, barrier and Cu seed layer, Cu electroplating for via-fill. Si DRIE (Deep Reactive Ion Etching) methods are used for the microdrilling of vias. Copper electroplating techniques with Periodic Pulse Reverse (PPR) current and solutions made in-house, are investigated for the filling and metallization of vias. The initial results are demonstrated in this paper. Vias with diameter/space/depth of 40 pm (or plus)/100 mu m/100 mu m, have been successfully formed and filled, which proves the effectiveness of our efforts, and have partially paved the way to a multilayer-stacking homogeneous/heterogeneous integration-in-a package.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265971001146&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2008.4734762
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/261102]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liao, Hongguang,Miao, Min,Wan, Xin,et al. Microfabrication of Through Silicon Vias (TSV) for 3D SiP. 2008-01-01.

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