Gain characteristics of the InGaAs strained quantum wells with GaAs,   AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting   lasers

doi:10.1063/1.3081974

CORC > 北京大学 > 信息科学技术学院

	Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers
	Zhang, Peng ; Song, Yanrong ; Tian, Jinrong ; Zhang, Xinping ; Zhang, Zhigang
刊名	应用物理杂志
	2009
关键词	aluminium compounds band structure gallium arsenide gallium compounds III-V semiconductors indium compounds optical pumping quantum well lasers surface emitting lasers PUMPED SEMICONDUCTOR-LASERS BAND OFFSETS DISK LASER HIGH-POWER ALLOYS NM
DOI	10.1063/1.3081974
英文摘要	InGaAs strained quantum wells (QWs) with GaAs, AlGaAs, and GaAsP barriers are widely used in optically pumped vertical-external-cavity surface-emitting lasers operating at 1 mu m wavelength band. Compared with the reported data, the model-solid theory, which is more suitable for the studied materials, is selected to calculate the band offset. The band structures and the gain characteristics of the three different QWs are computed and compared, and the theoretical results are in good agreement with the recent experimental reports. The numerical simulation shows that the QW with the GaAs barrier has the highest absorption but the lowest peak gain, while for the AlGaAs barrier, it has the lowest absorption but the highest peak gain, and for the GaAsP barrier, it has a moderate absorption and peak gain. GaAsP is the most appropriate candidate for the barrier of InGaAs strained QW when the low-threshold, large-gain, and high-temperature characteristics are demanded simultaneously.; Physics, Applied; SCI(E); EI; 15; ARTICLE; 5; 105
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/246473]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Peng,Song, Yanrong,Tian, Jinrong,et al. Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers[J]. 应用物理杂志,2009.
APA	Zhang, Peng,Song, Yanrong,Tian, Jinrong,Zhang, Xinping,&Zhang, Zhigang.(2009).Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers.应用物理杂志.
MLA	Zhang, Peng,et al."Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers".应用物理杂志 (2009).