High-performance doping-free carbon-nanotube-based CMOS devices and   integrated circuits

doi:10.1007/s11434-011-4791-6

CORC > 北京大学 > 信息科学技术学院

	High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits
	Zhang ZhiYong ; Wang Sheng ; Peng LianMao
刊名	科学通报英文版
	2012
关键词	carbon nanotube field-effect transistor doping-free complementary metal-oxide-semiconductor high frequency FIELD-EFFECT TRANSISTORS HIGH-KAPPA DIELECTRICS ELECTRICAL-TRANSPORT AMBIPOLAR TRANSISTOR LOGIC GATES ELECTRONICS CONTACTS ARRAYS NANOELECTRONICS MOBILITY
DOI	10.1007/s11434-011-4791-6
英文摘要	Ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) have been fabricated by contacting semiconducting single-walled CNTs (SWCNTs) using Sc or Y. The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator. The CNT FETs outperformed n-type Si metal-oxide-semiconductor (MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs. Together with the demonstration of ballistic p-type CNT FETs using Pd contacts, this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter was demonstrated, which had a voltage gain of over 160. Two adjacent n- and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons (3000 cm(2) V-1 s(-1)) and holes (3300 cm(2) V-1 s(-1)). The CNT FETs also had excellent potential for high-frequency applications, such as a high-performance frequency doubler.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000299921800002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Multidisciplinary Sciences; SCI(E); 9; REVIEW; 2-3; 135-148; 57
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/236989]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang ZhiYong,Wang Sheng,Peng LianMao. High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits[J]. 科学通报英文版,2012.
APA	Zhang ZhiYong,Wang Sheng,&Peng LianMao.(2012).High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits.科学通报英文版.
MLA	Zhang ZhiYong,et al."High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits".科学通报英文版 (2012).