NiSi金属栅电学特性的热稳定性研究

doi:10.3321/j.issn:1000-3290.2007.08.095

CORC > 北京大学 > 信息科学技术学院

	NiSi金属栅电学特性的热稳定性研究; Thermal stability of electrical characteristics of nickel silicide metal gate
	单晓楠 ; 黄如 ; 李炎 ; 蔡一茂
刊名	物理学报
	2007
关键词	金属栅炉退火快速热退火 NiSi metal gate NiSi furnace annealing rapid thermal annealing
DOI	10.3321/j.issn:1000-3290.2007.08.095
英文摘要	研究了NiSi金属栅的各种电学特性及其热稳定性,提出一个物理模型用于解释当形成温度大于500℃时NiSi功函数随退火温度升高而增大的现象.测量了不同退火温度形成的NiSi材料的方块电阻,当退火温度大于400℃时,方块电阻达到最小,并在400—600℃范围内稳定.比较各种温度下形成的NiSi材料X射线衍射谱的变化,说明温度在400—600℃范围内NiSi相为最主要的成分.制备了以NiSi为金属栅的金属氧化物半导体电容.通过等效氧化层电荷密度及击穿电场Ebd的分布研究,说明炉退火时间较长将导致NiSi金属栅与栅介质之间界面质量下降、击穿电场降低,这种退火方式不适合作为NiSi金属栅的形成方式.系统...; The electrical characteristics of NiSi metal gate and their thermal stability were studied. A physical model is proposed to explain the increase in NiSi work function when the forming temperature is higher than 500 degrees C. By measuring the sheet resistance of NiSi film prepared at different temperatures, it is shown that NiSi has the lowest resistance when formed at 400 degrees C, which is stable from 400 to 600 T. The X-ray diffraction measurement for the NiSi samples formed at various temperatures revealed that NiSi phase was the main component at temperatures from 400 to 600 T. The capacitors formed by furnace annealing has higher equivalent oxide charge Q(ox). and lower breakdown electric field E-bd, which proves that furnace annealing is unsuitable for NiSi metal gate fabrication due to the long time of thermal processing (400 degrees C for 30 min). The electrical characteristics of NiSi gate metal oxide semiconductor capacitors formed at various rapid thermal annealing( RTA) temperatures were studied. By comparing the C-V curves, I-g-V-g curves and Q(ox), of the capacitors, it was found that when the RTA temperature is higher than 500 degrees C, reaction between NiSi and gate oxide will occurr, reducing the quality of the gate dielectric. In conclusion, the suitable forming temperature of NiSi metal gate should be from 400 to 500 degrees C. Moreover, the NiSi work function and Q(ox) formed at 400, 450 and 500 degrees C respectively were also determined.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000248684800095&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; SCI(E); EI; 中文核心期刊要目总览(PKU); 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 4; 08; 4943-4949; 56
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/174607]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	单晓楠,黄如,李炎,等. NiSi金属栅电学特性的热稳定性研究, Thermal stability of electrical characteristics of nickel silicide metal gate[J]. 物理学报,2007.
APA	单晓楠,黄如,李炎,&蔡一茂.(2007).NiSi金属栅电学特性的热稳定性研究.物理学报.
MLA	单晓楠,et al."NiSi金属栅电学特性的热稳定性研究".物理学报 (2007).