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	SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures
	Yang, Zhenchuan ; Zhang, Baoshun ; Lau, Kei May ; Chen, Kevin J.
	2007
英文摘要	We developed a SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabricating suspended GaN microstructures without direct GaN etching. The masked GPS technique combines masked selective area growth (SAG) of gallium nitride (GaN) on patterned silicon substrate and subsequent sacrificial undercutting of GaN microstructures by isotropic wet etchant. The experimental results show that the suspended GaN microstructures fabricated by SiN-masked GPS technique can feature smooth edges. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306432
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153705]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Zhenchuan,Zhang, Baoshun,Lau, Kei May,et al. SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructures. 2007-01-01.

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