QQ客服 官方微博 反馈留言

	Investigation of PECVD SiC nano film
	Zhe, Chen ; Dayu, Tian ; Guobing, Zhang ; Haixia, Zhang
	2007
英文摘要	PECVD SiC nano thin films have been investigated. The element component was controlled by gas resources and residual stress was controlled by furnace annealing. The results of XRD, HRTEM measured show formation of SiC nano crystalline structure through a structure re-ordering by laser annealing, and the performance of PECVD SiC film is ameliorated with the nano crystalline. The nanoindentation test shows the SiCs hardness and Young's modulus has been Improved. The resistant of SiC thin Alms has been reduced effectively by in-situ doped together with laser annealing. ? 2007 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/NANO.2007.4601373
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153654]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhe, Chen,Dayu, Tian,Guobing, Zhang,et al. Investigation of PECVD SiC nano film. 2007-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。