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	A Monte Carlo study of ambipolar Schottky barrier MOSFETs
	Lang, Zeng ; Xiao, Yan Liu ; Gang, Du ; Jin, Feng Kang ; Ru, Qi Han
	2009
英文摘要	In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it is summarized that the tunneling at source side dominates the carrier transport. ?2009 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/IWCE.2009.5091081
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153593]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lang, Zeng,Xiao, Yan Liu,Gang, Du,et al. A Monte Carlo study of ambipolar Schottky barrier MOSFETs. 2009-01-01.

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