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	Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires
	He, Yuhui ; Fan, Chun ; Zhao, Yu Ning ; Du, Gang ; Liu, Xiao Yan ; Han, Ruqi
	2008
关键词	strain effect core-shell nanowire valence band QUANTUM-WELLS HETEROSTRUCTURES DOTS
英文摘要	We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6x6 k center dot p model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to F point, and the effective masses of more subbands begin to decrease when the shell thickness increases.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000260373200031&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 2
语种	英语
DOI标识	10.1109/SISPAD.2008.4648252
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153519]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yuhui,Fan, Chun,Zhao, Yu Ning,et al. Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires. 2008-01-01.

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