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	On the Effect of Scattering in Schottky Barrier MOSFETs
	Zeng, Lang ; Liu, Xiao Yan ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi
	2008
关键词	scattering ballistic transport Schottky barrier MOSFETs MONTE-CARLO-SIMULATION IMPACT-IONIZATION MODEL ELECTRON-TRANSPORT CHANNEL
英文摘要	In this paper, we performed a simulation on a 45-nm UTB SOI Schottky Barrier MOSFETs using our two dimensional Ensemble full band Monte Carlo simulator to evaluate the effect of scattering in Schottky Barrier MOSFETs (SB FETs). The carrier transport details for both ballistic case and scattering case are simulated and analyzed. The scattering plays a less important role on the performance in SB FETs than in conventional highly doped S/D MOSFETs. Based on our analysis, the inappropriate of Natori's ballistic transport model applied to SB FETs is revealed and the reason IS one to the existence of non-local tunneling. Further development of the quasi ballistic model is necessary to include this non-local effect.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000271122100072&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/EDSSC.2008.4760703
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153498]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zeng, Lang,Liu, Xiao Yan,Du, Gang,et al. On the Effect of Scattering in Schottky Barrier MOSFETs. 2008-01-01.

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