QQ客服 官方微博 反馈留言

	GaAs-GaP Core-Shell Nanowire Transistors: A Computational Study
	He, Yuhui ; Zhao, Yuning ; Fan, Chun ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi
	2008
关键词	QUANTUM DOTS HETEROSTRUCTURES STRAIN SEMICONDUCTORS
英文摘要	We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k-p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as the shell thickness increases. We analyze its impact on the transistor performance, and our simulation results indicate that in order to achieve a good ON/OFF current ratio the epitaxial shell should be grown thin enough.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265971000098&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2008.4734545
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153430]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yuhui,Zhao, Yuning,Fan, Chun,et al. GaAs-GaP Core-Shell Nanowire Transistors: A Computational Study. 2008-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。