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	Microcantilever Humidity Sensor Based on Embedded nMOSFET with < 100 >-Crystal-Orientation Channel
	Wang, J. ; Wu, W. G. ; Huang, Y. ; Hao, Y. L.
	2009
关键词	CMOS TECHNOLOGY ARRAY
英文摘要	This paper reports a novel silicon microcantilever sensor with an embedded n-type metal-oxide semiconductor field-effect transistor (nMOSFET) for the detection of relative humidity (RH) based on the surface stress sensing principle. The nMOSFET has a channel along < 100 > crystal orientation of (100) silicon, which is parallel to the microcantilever. The RH detection is realized by coating a thin gold film on the bottom surfaces of the microcantilevers and then a self-assembled monolayer of 4-mercaptobenzoic acid on the film. The output voltage of the sensor as a function of RH is linear, and the sensitivity is up to 4.38 mV/1% RH at room temperature.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000279891700157&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSENS.2009.5398547
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153317]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, J.,Wu, W. G.,Huang, Y.,et al. Microcantilever Humidity Sensor Based on Embedded nMOSFET with < 100 >-Crystal-Orientation Channel. 2009-01-01.

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