Random telegraph signal noise in gate-all-around silicon nanowire   transistors featuring Coulomb-blockade characteristics

doi:10.1063/1.3089240

CORC > 北京大学 > 信息科学技术学院

	Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics
	Zhuge, Jing ; Zhang, Liangliang ; Wang, Runsheng ; Huang, Ru ; Kim, Dong-Won ; Park, Donggun ; Wang, Yangyuan
刊名	应用物理学快报
	2009
关键词	Coulomb blockade elemental semiconductors field effect transistors nanoelectronics nanowires semiconductor device noise silicon FIELD-EFFECT TRANSISTORS SIMULATION DECANANOMETER MOSFETS ENERGY
DOI	10.1063/1.3089240
英文摘要	Random telegraph signal (RTS) noise is experimentally investigated in silicon nanowire transistors (SNWTs) fabricated with complementary-metal-oxide-semiconductor compatible top-down approach. The observed RTS is found to have Coulomb-blockade characteristics rather than those described by conventional Shockley-Read-Hall theory. The capture and emission time constants of oxide traps strongly depend on the gate bias due to strong quantum confinement and enhanced electrical field in nanowire structures. Amplitude of single RTS in SNWTs is found within 10%, while large amplitude of multilevel RTS up to 34% at room temperature is observed due to the ultranarrow channel and the behavior of independent multitraps in SNWTs. Widely spread time constants of oxide traps and slow RTS of very long-time constants (several hundred seconds) are also observed in SNWTs.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000263804400087&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 13; ARTICLE; 8; 94
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152827]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhuge, Jing,Zhang, Liangliang,Wang, Runsheng,et al. Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics[J]. 应用物理学快报,2009.
APA	Zhuge, Jing.,Zhang, Liangliang.,Wang, Runsheng.,Huang, Ru.,Kim, Dong-Won.,...&Wang, Yangyuan.(2009).Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics.应用物理学快报.
MLA	Zhuge, Jing,et al."Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics".应用物理学快报 (2009).