Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect   Transistors

doi:10.1109/TED.2009.2019739

CORC > 北京大学 > 信息科学技术学院

	Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors
	He, Yuhui ; Zhao, Yuning ; Fan, Chun ; Kang, Jinfeng ; Han, Ruqi ; Liu, Xiaoyan
刊名	ieee电子器件汇刊
	2009
关键词	Field-effect transistors (FETs) quantum wires semiconductor heterojunctions QUANTUM-WELLS STRAIN HETEROSTRUCTURES SEMICONDUCTORS DOTS
DOI	10.1109/TED.2009.2019739
英文摘要	We evaluate the performance of GaAs-GaP core-shell (C-S)-nanowire (NW) field-effect transistors by employing a semiclassical ballistic transport model. The valence-band structures of GaAs-GaP C-S NWs are calculated by using a k . p method including the strain effect. The calculations show that the strain causes substantial band warping and pushes valence subbands to move up. We demonstrate that the ON current can be enhanced with the strength of strain induced in the core, but an extremely thin equivalent oxide thickness may suppress the effect of the strain-induced current improvement. The achieved results can provide a design guide for optimizing device performance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000266330200005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 6; ARTICLE; 6; 1199-1203; 56
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152771]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yuhui,Zhao, Yuning,Fan, Chun,et al. Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors[J]. ieee电子器件汇刊,2009.
APA	He, Yuhui,Zhao, Yuning,Fan, Chun,Kang, Jinfeng,Han, Ruqi,&Liu, Xiaoyan.(2009).Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors.ieee电子器件汇刊.
MLA	He, Yuhui,et al."Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors".ieee电子器件汇刊 (2009).