Surrounding Strain Effects on the Performance of Si Nanowires Grown in   Different Axial Orientations

doi:10.1109/TNANO.2011.2110660

CORC > 北京大学 > 信息科学技术学院

	Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations
	Xu, Honghua ; Liu, Xiaoyan ; Du, Gang ; Fan, Chun ; Jin, Rui ; Han, Ruqi ; Kang, Jinfeng
刊名	ieee 纳米技术汇刊
	2011
关键词	Effective hole mobility k.p method Kubo-Greenwood formula strain tensor component surrounding strain FIELD-EFFECT TRANSISTORS BAND-STRUCTURE SILICON GATE OXIDATION MOBILITY
DOI	10.1109/TNANO.2011.2110660
英文摘要	In this paper, we calculate the surrounding strain effects owing to gate dielectric on the device performance of Si nanowires (NWs) with different axial orientations. Surrounding strain effects from valence band structure to hole transport property of NW FETs are developed. The simulated results show that surrounding strain pushes the valence subbands upward. The up-shifting trend of the valence subband maximum is (1 1 0) NW > (001) NW > (1 1 1) NW. The shift coincides with the epsilon(zz) variation, which contributes the most to modulate the valence subbands. Compared to pure Si NWs, surrounding strain owing to HfO(2) dielectric enhances the effective hole mobility. Effective hole mobility enhancement in HfO2 surrounding Si NW is (0 0 1) NW > (111) NW > (1 1 0) NW. However, Si(1 1 0) NW still has the largest effective hole mobility among three axial orientations.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000294860800032&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 2; ARTICLE; 5; 1126-1130; 10
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152564]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Honghua,Liu, Xiaoyan,Du, Gang,et al. Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations[J]. ieee 纳米技术汇刊,2011.
APA	Xu, Honghua.,Liu, Xiaoyan.,Du, Gang.,Fan, Chun.,Jin, Rui.,...&Kang, Jinfeng.(2011).Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations.ieee 纳米技术汇刊.
MLA	Xu, Honghua,et al."Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations".ieee 纳米技术汇刊 (2011).