Stress-induced high-field gate leakage current in ultra-thin gate oxide

doi:10.1016/S0038-1101(00)00008-3

CORC > 北京大学 > 信息科学技术学院

	Stress-induced high-field gate leakage current in ultra-thin gate oxide
	Wei, JL ; Mao, LF ; Xu, MZ ; Tan, CH ; Duan, XR
刊名	固体电子学
	2000
关键词	SILC ultra-thin gate oxide proportioned difference operator SIO2-FILMS MECHANISM
DOI	10.1016/S0038-1101(00)00008-3
英文摘要	A number of groups have reported that the low-field stress-induced leakage current (SILC) in thin oxides increased after the oxides had been subjected to high voltage stresses. In this study, we observed that high-field SILC increased after the oxides had been subjected to high voltage stresses. The experimental results suggest strongly that SILC must be considered at a high-field region, and the dependence of the high-field SILC on the measurement field E-ox is proportional to exp(cE(ox)), as compared to the exp(-c/E-ox), at a low field which was reported by some researchers. The high-field SILC increases and saturates after a long stress time, when the stress time increases, which is similar to the low-field SILC. Using the method of proportional difference operator, the trap generation/capture time constant can be obtained. (C) 2000 Elsevier Science Ltd. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000086956200014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 4; ARTICLE; 6; 977-980; 44
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152120]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wei, JL,Mao, LF,Xu, MZ,et al. Stress-induced high-field gate leakage current in ultra-thin gate oxide[J]. 固体电子学,2000.
APA	Wei, JL,Mao, LF,Xu, MZ,Tan, CH,&Duan, XR.(2000).Stress-induced high-field gate leakage current in ultra-thin gate oxide.固体电子学.
MLA	Wei, JL,et al."Stress-induced high-field gate leakage current in ultra-thin gate oxide".固体电子学 (2000).