A Multi-V-th a-IGZO TFT Technology Using Anodization to Selectively   Reduce Oxygen Vacancy Concentration in Channel Regions

doi:10.1109/LED.2014.2359931

CORC > 北京大学 > 信息科学技术学院

	A Multi-V-th a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions
	He, Xin ; Xiao, Xiang ; Shao, Yang ; Deng, Wei ; Leng, Chuanli ; Zhang, Shengdong
刊名	ieee electron device letters
	2014
关键词	a-IGZO TFT multi threshold voltage anodic oxidation FILM TRANSISTORS OXIDE PERFORMANCE ALUMINUM
DOI	10.1109/LED.2014.2359931
英文摘要	A multithreshold voltage amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) technology based on the anodic oxidation (anodization) technique is demonstrated. It is shown that the characteristics of the a-IGZO channel layer can be considerably tailored by the anodization treatment. As a result, the threshold voltage of the a-IGZO TFTs depends on the anodization voltage, making it possible to fabricate both depletion and enhancement mode TFTs on the same substrate. The secondary ion mass spectrometry result shows that the oxygen content is noticeably increased in the anodized a-IGZO film, suggesting that the dependence of the threshold voltage on the anodization treatment is attributed to the anodization-induced reduction of oxygen vacancy concentration in the channel region, which also leads to an alleviated V-th shift under negative bias illumination stress in the anodized devices.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345575400029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 1; ARTICLE; zhangsd@pku.edu.cn; 12; 1248-1250; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151963]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Xin,Xiao, Xiang,Shao, Yang,et al. A Multi-V-th a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions[J]. ieee electron device letters,2014.
APA	He, Xin,Xiao, Xiang,Shao, Yang,Deng, Wei,Leng, Chuanli,&Zhang, Shengdong.(2014).A Multi-V-th a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions.ieee electron device letters.
MLA	He, Xin,et al."A Multi-V-th a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions".ieee electron device letters (2014).