Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods   and nanobelts

doi:10.1039/b804943b

CORC > 北京大学 > 信息科学技术学院

	Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts
	Xue, Shoubin ; Zhang, Xing ; Huang, Ru ; Zhuang, Huizhao ; Xue, Chengshan
刊名	dalton transactions
	2008
关键词	LIGHT-EMITTING-DIODES GALLIUM NITRIDE NANOWIRES INFRARED-ABSORPTION OPTICAL-PROPERTIES LASER-DIODES FILMS NANOCRYSTALS POWDERS CARBON BLUE
DOI	10.1039/b804943b
英文摘要	A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN nanostructures by ammoniating Ga(2)O(3) films was proposed in this paper. During the ammoniating process, the amorphous middle buffer layer may unavoidably produce some defects and dislocations. Some defect pits come out, which have the lowest surface energy and can subsequently be used as a mask/template or act as potential nucleation sites to fabricate the GaN actinomorphic nanostructures. The as-prepared products are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results indicate that all the reflections of the samples can be indexed to the hexagonal GaN phase and the clear lattice fringes in HRTEM further confirm the growth of high-quality single-crystal GaN nanostructures. The SEM images show that the nanostructures have been realized under different experimental conditions exhibiting different shapes: nanowires, nanorods, and nanobelts. No particles or other nanostructures are found in the SEM study, demonstrating that the product possesses pure nanostructures. These nanostructures show a very good emission peak at 366 nm, which will have a good advantage for applications in laser devices using one-dimensional structures. Finally, the growth mechanism is also briefly discussed.; Chemistry, Inorganic & Nuclear; SCI(E); EI; PubMed; 4; ARTICLE; 32; 4296-4302
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151870]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xue, Shoubin,Zhang, Xing,Huang, Ru,et al. Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts[J]. dalton transactions,2008.
APA	Xue, Shoubin,Zhang, Xing,Huang, Ru,Zhuang, Huizhao,&Xue, Chengshan.(2008).Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts.dalton transactions.
MLA	Xue, Shoubin,et al."Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts".dalton transactions (2008).