High performance tunnel field-effect transistor by gate and source   engineering

doi:10.1088/0957-4484/25/50/505201

CORC > 北京大学 > 信息科学技术学院

	High performance tunnel field-effect transistor by gate and source engineering
	Huang, Ru ; Huang, Qianqian ; Chen, Shaowen ; Wu, Chunlei ; Wang, Jiaxin ; An, Xia ; Wang, Yangyuan
刊名	nanotechnology
	2014
关键词	tunnel field-effect transistors subthreshold slope dopant segregation FET DESIGN SOI
DOI	10.1088/0957-4484/25/50/505201
英文摘要	As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I-ON/I-OFF ratio (similar to 10(7)) at V-DS = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I-ON/I-OFF ratio of similar to 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345603900010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); PubMed; 3; ARTICLE; ruhuang@pku.edu.cn; 50; 505201; 25
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151774]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Ru,Huang, Qianqian,Chen, Shaowen,et al. High performance tunnel field-effect transistor by gate and source engineering[J]. nanotechnology,2014.
APA	Huang, Ru.,Huang, Qianqian.,Chen, Shaowen.,Wu, Chunlei.,Wang, Jiaxin.,...&Wang, Yangyuan.(2014).High performance tunnel field-effect transistor by gate and source engineering.nanotechnology.
MLA	Huang, Ru,et al."High performance tunnel field-effect transistor by gate and source engineering".nanotechnology (2014).