Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler
Zhang XL; Zhang FQ(张富强); Song SL; Chen NF(陈诺夫); Wang ZG; Lin LY
刊名Chinese Science Bulletin/中国科学通报(英文版)
2002
卷号47期号:21页码:1780-1782
关键词Electrochemistry C-V Magnetic Semiconductor Gamnsb Iii-V Semiconductors Magnetotransport Properties Transport-Properties (In,Mn)As/(Ga,Al)Sb Magnetoresistance Heterostructures (Ga,Mn)As Gaas
ISSN号1001-6538
通讯作者Zhang, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
中文摘要Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).
类目[WOS]Multidisciplinary Sciences
研究领域[WOS]Science & Technology - Other Topics
关键词[WOS]III-V SEMICONDUCTORS ; MAGNETOTRANSPORT PROPERTIES ; TRANSPORT-PROPERTIES ; (IN,MN)AS/(GA,AL)SB ; MAGNETORESISTANCE ; HETEROSTRUCTURES ; (GA,MN)AS ; GAAS
收录类别SCI
语种英语
WOS记录号WOS:000178754200004
公开日期2009-08-03 ; 2010-06-13
内容类型期刊论文
源URL[http://dspace.imech.ac.cn/handle/311007/33673]  
专题力学研究所_力学所知识产出(1956-2008)
推荐引用方式
GB/T 7714
Zhang XL,Zhang FQ,Song SL,et al. Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler[J]. Chinese Science Bulletin/中国科学通报(英文版),2002,47(21):1780-1782.
APA Zhang XL,张富强,Song SL,陈诺夫,Wang ZG,&Lin LY.(2002).Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler.Chinese Science Bulletin/中国科学通报(英文版),47(21),1780-1782.
MLA Zhang XL,et al."Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler".Chinese Science Bulletin/中国科学通报(英文版) 47.21(2002):1780-1782.
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