Narrow-Gap Quantum Wires Arising from the Edges of Monolayer MoS2   Synthesized on Graphene

doi:10.1002/admi.201600332

CORC > 北京大学 > 化学与分子工程学院

	Narrow-Gap Quantum Wires Arising from the Edges of Monolayer MoS2 Synthesized on Graphene
	Shi, Jianping ; Zhou, Xiebo ; Han, Gao-Feng ; Liu, Mengxi ; Ma, Donglin ; Sun, Jingyu ; Li, Cong ; Ji, Qingqing ; Zhang, Yu ; Song, Xiuju ; Lang, Xing-You ; Jiang, Qing ; Liu, Zhongfan ; Zhang, Yanfeng
刊名	ADVANCED MATERIALS INTERFACES
	2016
关键词	bandgaps domain edge hydrogen evolution reaction MoS2 graphene heterostructures scanning tunneling microscopy spectroscopy TRANSITION-METAL DICHALCOGENIDES EFFICIENT HYDROGEN EVOLUTION DER-WAALS HETEROSTRUCTURES CHEMICAL-VAPOR-DEPOSITION MONO LAYER MOS2 MOLYBDENUM-DISULFIDE H-2 EVOLUTION AU FOILS GROWTH NANOPARTICLES
DOI	10.1002/admi.201600332
英文摘要	MoS2/graphene (MoS2/Gr) vertical heterostructures have exhibited great application potentials in high speed electronic and optoelectronic devices, as well as efficient electrocatalysts in hydrogen evolution reaction (HER). The electronic property at the edge of monolayer MoS2 is an essential parameter for addressing such applications. Herein, it is reported that, for monolayer MoS2 synthesized on Gr/Au foils by chemical vapor deposition, a dramatic decrease of the bandgap from approximate to 2.20 to approximate to 0.30 eV occurs at the domain edge within a lateral distance of approximate to 6 nm, as evidenced by scanning tunneling microscopy/spectroscopy observations. The edges of monolayer MoS2 on Gr/Au foils can thus be regarded as narrow-gap quantum wires considering of their reduced bandgaps. More intriguingly, it is found that this bandgap decrease at the domain edge is closely related to the rather high HER performance for MoS2/Gr/Au foils comparing with that of MoS2/Au foils. Briefly, this work should propel the band structure investigations for MoS2/Gr stacks and their applications in energy related fields.; National Natural Science Foundation of China [51222201, 51472008, 51290272, 21201012, 51121091, 51072004, 51201069]; National Basic Research Program of China [2012CB921404, 2012CB933404, 2013CB932603]; Beijing Municipal Science and Technology Planning Project [Z151100003315013]; SCI(E); ARTICLE; yanfengzhang@pku.edu.cn; 17; 3
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/456931]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Shi, Jianping,Zhou, Xiebo,Han, Gao-Feng,et al. Narrow-Gap Quantum Wires Arising from the Edges of Monolayer MoS2 Synthesized on Graphene[J]. ADVANCED MATERIALS INTERFACES,2016.
APA	Shi, Jianping.,Zhou, Xiebo.,Han, Gao-Feng.,Liu, Mengxi.,Ma, Donglin.,...&Zhang, Yanfeng.(2016).Narrow-Gap Quantum Wires Arising from the Edges of Monolayer MoS2 Synthesized on Graphene.ADVANCED MATERIALS INTERFACES.
MLA	Shi, Jianping,et al."Narrow-Gap Quantum Wires Arising from the Edges of Monolayer MoS2 Synthesized on Graphene".ADVANCED MATERIALS INTERFACES (2016).