Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

	Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
	Dong Z ; Wang W ; Huang BJ ; Zhang X ; Guan N ; Chen HD
刊名	chinese optics letters
	2011
卷号	9 期号:8 页码:82301
关键词	ROOM-TEMPERATURE VISIBLE PHOTOLUMINESCENCE WAVE-GUIDES DEVICES ELECTROLUMINESCENCE MODEL SI
ISSN号	1671-7694
通讯作者	dong, z (reprint author), chinese acad sci, state key lab integrated optoelect inst semicond, beijing 100083, peoples r china. dongzan@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china[61036002, 60536030, 60776024, 60877035, 61076023, 90820002]; national "863" program of china[2007aa04z329, 2007aa04z254, 2011cb933203, 2011cb933102]
公开日期	2011-09-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22589]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Dong Z,Wang W,Huang BJ,et al. Low threshold voltage light-emitting diode in silicon-based standard CMOS technology[J]. chinese optics letters,2011,9(8):82301.
APA	Dong Z,Wang W,Huang BJ,Zhang X,Guan N,&Chen HD.(2011).Low threshold voltage light-emitting diode in silicon-based standard CMOS technology.chinese optics letters,9(8),82301.
MLA	Dong Z,et al."Low threshold voltage light-emitting diode in silicon-based standard CMOS technology".chinese optics letters 9.8(2011):82301.