VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy

	VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy
	Zhao J ; Zeng YP ; Yang QM ; Li YY ; Cui LJ ; Liu C
刊名	journal of crystal growth
	2011
卷号	329 期号:1 页码:40548
关键词	ZINC BLENDE CDSE THIN-FILMS OPTICAL-PROPERTIES DEPOSITION ZNSE
ISSN号	0022-0248
通讯作者	zhao, j (reprint author), chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. jiezhao@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation program foundation of institute of semiconductors, chinese academy of sciences[09s1010001]; national natural science foundation of china[0913120000]
公开日期	2011-09-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22623]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhao J,Zeng YP,Yang QM,et al. VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy[J]. journal of crystal growth,2011,329(1):40548.
APA	Zhao J,Zeng YP,Yang QM,Li YY,Cui LJ,&Liu C.(2011).VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy.journal of crystal growth,329(1),40548.
MLA	Zhao J,et al."VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy".journal of crystal growth 329.1(2011):40548.