Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor   Deposited Graphene p-n Junctions

doi:10.1021/ja404890n

CORC > 北京大学 > 化学与分子工程学院

	Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor Deposited Graphene p-n Junctions
	Wu, Di ; Yan, Kai ; Zhou, Yu ; Wang, Huan ; Lin, Li ; Peng, Hailin ; Liu, Zhongfan
刊名	journal of the american chemical society
	2013
关键词	PHOTOCURRENT GENERATION DOPED GRAPHENE LAYER GRAPHENE LARGE-AREA TRANSISTOR FILMS PHOTODETECTION PHOTORESPONSE PERFORMANCE DEVICES
DOI	10.1021/ja404890n
英文摘要	Graphene p-n junctions grown by chemical vapor deposition hold great promise for the applications in high-speed, broadband photodetectors and energy conversion devices, where efficient photoelectric conversion can be realized by a hot-carrier-assisted photothermoelectric (PTE) effect and hot-carrier multiplication. However, the overall quantum efficiency is restricted by the low light absorption of single-layer graphene. Here, we present the first experimental demonstration of a plasmon-enhanced PTE conversion in chemical vapor deposited graphene p-n junctions. Surface plasmons of metallic nanostructures placed near the graphene p-n junctions were found to significantly enhance the optical field in the active layer and allow for a 4-fold increase in the photocurrent. Moreover, the utilization of localized plasmon enhancement facilitates the realization of efficient PTE conversion of graphene p-n junction devices under global illumination, which may offer an avenue for practical applications of graphene-based photodetectors and solar cells.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000322752900012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; SCI(E); 23; ARTICLE; 30; 10926-10929; 135
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/150737]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Wu, Di,Yan, Kai,Zhou, Yu,et al. Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor Deposited Graphene p-n Junctions[J]. journal of the american chemical society,2013.
APA	Wu, Di.,Yan, Kai.,Zhou, Yu.,Wang, Huan.,Lin, Li.,...&Liu, Zhongfan.(2013).Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor Deposited Graphene p-n Junctions.journal of the american chemical society.
MLA	Wu, Di,et al."Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor Deposited Graphene p-n Junctions".journal of the american chemical society (2013).