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The critical role of Si doping in enhancing the stability of M6C carbides
Jiang, Li; Ye, Xiang-Xi; Wang, Zhi-Qiang; Yu, Cun; Dong, Jia-Sheng; Xie, RuoBing; Li, Zhi-Jun; Yan, Long; Sham, Tsun-Kong; Zhou, Xing-Tai
刊名ELSEVIER SCIENCE SA
2017-12-25
卷号728页码:917-926
关键词Si Doping M6c Carbides Stability Si K-edge Xanes First-principles Calculations
ISSN号0925-8388
英文摘要M6C carbides are one of the most common second phases in high speed steels and superalloys, and also an alternative catalytic materials for energy applications. Although the influences of Si doping on the stability of M6C carbides have been frequently observed in different alloys, the atomic-scale mechanism of which remains poorly understood. Here we obtain the Ni3Mo3C-type M6C carbides in GH3535 alloys and evaluate the dependence of their structure and composition on Si contents. Combining high-energy synchrotron X-ray diffraction and first-principle calculations, Si atoms are found to preferentially occupy Ni (16d) sites in Ni3Mo3C structure. The electronic structures and Si K-edge x-ray absorption near edge structures demonstrate the band hybridization and charge transfer between Si atoms and the nearest-neighbor Ni (32e) and Mo (48f) atoms in Si-doped Ni3Mo3C structures, which is responsible for the stability of M6C carbides. (C) 2017 Elsevier B.V. All rights reserved.; M6C carbides are one of the most common second phases in high speed steels and superalloys, and also an alternative catalytic materials for energy applications. Although the influences of Si doping on the stability of M6C carbides have been frequently observed in different alloys, the atomic-scale mechanism of which remains poorly understood. Here we obtain the Ni3Mo3C-type M6C carbides in GH3535 alloys and evaluate the dependence of their structure and composition on Si contents. Combining high-energy synchrotron X-ray diffraction and first-principle calculations, Si atoms are found to preferentially occupy Ni (16d) sites in Ni3Mo3C structure. The electronic structures and Si K-edge x-ray absorption near edge structures demonstrate the band hybridization and charge transfer between Si atoms and the nearest-neighbor Ni (32e) and Mo (48f) atoms in Si-doped Ni3Mo3C structures, which is responsible for the stability of M6C carbides. (C) 2017 Elsevier B.V. All rights reserved.
学科主题Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
资助机构National key research and development program of China [2016YFB0700404]; National Natural Science Foundation of China [51501216, 51371188, 51671122, 51671154, 51601213]; Strategic Priority Research Program of the Chinese Academy of Sciences [XDA02004210]; Talent development fund of shanghai [201650]; CFI; NSERC; CHIR; NRC; University of Saskatchewan
公开日期2018-01-10
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/78928]  
专题金属研究所_中国科学院金属研究所
通讯作者Li, ZJ; Yan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Thorium Molten Salts Reactor Ctr, Shanghai 201800, Peoples R China.
推荐引用方式
GB/T 7714
Jiang, Li,Ye, Xiang-Xi,Wang, Zhi-Qiang,et al. The critical role of Si doping in enhancing the stability of M6C carbides[J]. ELSEVIER SCIENCE SA,2017,728:917-926.
APA Jiang, Li.,Ye, Xiang-Xi.,Wang, Zhi-Qiang.,Yu, Cun.,Dong, Jia-Sheng.,...&Yan, L .(2017).The critical role of Si doping in enhancing the stability of M6C carbides.ELSEVIER SCIENCE SA,728,917-926.
MLA Jiang, Li,et al."The critical role of Si doping in enhancing the stability of M6C carbides".ELSEVIER SCIENCE SA 728(2017):917-926.
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