Transport properties of MnTe films with cracks produced in thermal cycling process

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	Transport properties of MnTe films with cracks produced in thermal cycling process
	Yang, Liang; Wang, Zhenhua; Zhang, Zhidong; Wang, ZH (reprint author), Univ Chinese Acad Sci, Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
刊名	SPRINGER
	2017-10-01
卷号	123 期号:10 页码:-
ISSN号	0947-8396
英文摘要	As a promising material in antiferromagnetic spintronics, MnTe films manifested complex characteristics according to previous reports. In this work, we investigate in details the temperature dependence of resistivity of MnTe films grown on SiO2/Si substrate and focus on the divaricating of cooling and warming resistivity-temperature (R-T) curves. It is found that such a divaricating in resistivity is associated with cracks produced in thermal cycles. By comparing the crystalline character and the morphology before and after the cycles, we verify the appearance of cracks and the release of stress in the films. Based on the temperature dependence of thermal-expansion coefficient of Si and MnTe, the origin of the cracks is the mismatched thermal-expansion coefficient (a). The humps, which only appear in the R-T curve of the first cooling process, are attributed to the produced cracks and/or the unreleased stress.; As a promising material in antiferromagnetic spintronics, MnTe films manifested complex characteristics according to previous reports. In this work, we investigate in details the temperature dependence of resistivity of MnTe films grown on SiO2/Si substrate and focus on the divaricating of cooling and warming resistivity-temperature (R-T) curves. It is found that such a divaricating in resistivity is associated with cracks produced in thermal cycles. By comparing the crystalline character and the morphology before and after the cycles, we verify the appearance of cracks and the release of stress in the films. Based on the temperature dependence of thermal-expansion coefficient of Si and MnTe, the origin of the cracks is the mismatched thermal-expansion coefficient (a). The humps, which only appear in the R-T curve of the first cooling process, are attributed to the produced cracks and/or the unreleased stress.
学科主题	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
资助机构	National Natural Science Foundation of China [51522104, 51331006]; National Key R&D Program of China [2017YFA0206302]
公开日期	2018-01-10
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79051]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, ZH (reprint author), Univ Chinese Acad Sci, Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Liang,Wang, Zhenhua,Zhang, Zhidong,et al. Transport properties of MnTe films with cracks produced in thermal cycling process[J]. SPRINGER,2017,123(10):-.
APA	Yang, Liang,Wang, Zhenhua,Zhang, Zhidong,&Wang, ZH .(2017).Transport properties of MnTe films with cracks produced in thermal cycling process.SPRINGER,123(10),-.
MLA	Yang, Liang,et al."Transport properties of MnTe films with cracks produced in thermal cycling process".SPRINGER 123.10(2017):-.