Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel

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	Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel
	Fan, D; Lei, H; Guo, CQ; Qi, DL; Gong, J; Sun, C; Sun, C (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China.
刊名	ACTA METALLURGICA SINICA-ENGLISH LETTERS
	2018-03-01
卷号	31 期号:3 页码:329-336
关键词	Chromium Nitride Films Compressive Stress Residual-stresses Intrinsic Stress Magnetron Evolution Coatings Microstructure Deposition Profiles
ISSN号	1006-7191
英文摘要	The reliability of a substrate curvature-based stress measurement method for CrN thin films on substrate with fluctuant surface was discussed. The stress error led by the ignorance of substrate thermal deformation was studied. Results showed that this error could be as large as several hundred MPa under general deposition conditions. Stress in the CrN thin films with different thicknesses ranging from 110 to 330 nm on stainless steel was studied by this method, in comparison with conventional results on silicon wafer. The thin films' morphology and structure were investigated and related to the film stress. A significant result of the comparison is that stress evolution in the thin films on steel obviously differs from that on silicon wafer, not only because the two substrates have different coefficients of thermal expansion, which provokes thermal stress, but also the considerable discrepancy in the thin films' grain coarsening rate and structure that induce different intrinsic stresses.; The reliability of a substrate curvature-based stress measurement method for CrN thin films on substrate with fluctuant surface was discussed. The stress error led by the ignorance of substrate thermal deformation was studied. Results showed that this error could be as large as several hundred MPa under general deposition conditions. Stress in the CrN thin films with different thicknesses ranging from 110 to 330 nm on stainless steel was studied by this method, in comparison with conventional results on silicon wafer. The thin films' morphology and structure were investigated and related to the film stress. A significant result of the comparison is that stress evolution in the thin films on steel obviously differs from that on silicon wafer, not only because the two substrates have different coefficients of thermal expansion, which provokes thermal stress, but also the considerable discrepancy in the thin films' grain coarsening rate and structure that induce different intrinsic stresses.
学科主题	Metallurgy & Metallurgical Engineering
语种	英语
公开日期	2018-06-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79455]
专题	金属研究所_中国科学院金属研究所
通讯作者	Lei, H; Sun, C (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Fan, D,Lei, H,Guo, CQ,et al. Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel[J]. ACTA METALLURGICA SINICA-ENGLISH LETTERS,2018,31(3):329-336.
APA	Fan, D.,Lei, H.,Guo, CQ.,Qi, DL.,Gong, J.,...&Sun, C .(2018).Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel.ACTA METALLURGICA SINICA-ENGLISH LETTERS,31(3),329-336.
MLA	Fan, D,et al."Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel".ACTA METALLURGICA SINICA-ENGLISH LETTERS 31.3(2018):329-336.