Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

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	Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions
	Hu, WJ; Paudel, TR; Lopatin, S; Wang, ZH; Ma, H; Wu, KW; Bera, A; Yuan, GL; Gruverman, A; Tsymbal, EY
刊名	ADVANCED FUNCTIONAL MATERIALS
	2018-02-07
卷号	28 期号:6 页码:-
关键词	Ferroelectric Tunnel-junctions Charge-ordered Manganites Augmented-wave Method Bifeo3 Thin-films Oxygen Vacancy Relaxation Electroresistance Semiconductors Zn0.3cd0.7se Percolation
ISSN号	1616-301X
英文摘要	Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of opto electronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb: SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.; Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of opto electronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb: SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.
学科主题	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
资助机构	King Abdullah University of Science and Technology (KAUST); National Science Foundation through the Nebraska Materials Research Science and Engineering Center [DMR-1420645]
公开日期	2018-06-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79518]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wu, T (reprint author), King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia.; Tsymbal, EY (reprint author), Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA.; Tsymbal, EY (reprint author), Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA.
推荐引用方式 GB/T 7714	Hu, WJ,Paudel, TR,Lopatin, S,et al. Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(6):-.
APA	Hu, WJ.,Paudel, TR.,Lopatin, S.,Wang, ZH.,Ma, H.,...&Tsymbal, EY .(2018).Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions.ADVANCED FUNCTIONAL MATERIALS,28(6),-.
MLA	Hu, WJ,et al."Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions".ADVANCED FUNCTIONAL MATERIALS 28.6(2018):-.